MOSFETs

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Išsami informacija Markė Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 35 A 30 V 0.008 Ω 1.15V 2.2V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1700 pF @ 15 V 28 nC @ 10 V 3.15 x 3.15 x 1.07mm 25 ns TrenchFET 25 ns 82s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
TN2106K1-G N-Channel MOSFET, 280 mA, 60 (Minimum) V TN2106, 3-Pin SOT-23 Microchip Technology Microchip Technology N 280 mA 60 (Minimum) V 5 Ω 2V 0.6V 20 V TO-236AB Surface Mount 3 Single Enhancement Driver MOSFET 360 mW 35 pF @ 25 V - 3.04 x 1.4 x 1.02mm 6 ns TN2106 3 ns - 1.4mm 1.02mm 3.04mm 1.8V - +150 °C 1 -55 °C - -
MIC94052YC6-TR Dual P-Channel MOSFET, 2 A, 6 V MIC94052, 6-Pin SC-70 Microchip Technology Microchip Technology P 2 A 6 V 180 mΩ 1.2V 0.5V -6 V SC-70 Surface Mount 6 Single - - 270 mW - - 2.2 x 1.35 x 1mm 60 ns MIC94052 15 ns - 1.35mm 1mm 2.2mm - - +150 °C 2 -40 °C - -
DN2470K4-G Dual N-Channel MOSFET, 170 mA, 700 V Depletion DN2470, 4-Pin DPAK Microchip Technology Microchip Technology N 170 mA 700 V 42 Ω - - 20 V TO-252 Surface Mount 4 Single Depletion - 2.5 W 540 (Maximum) pF @ 25 V - 0.26 x 0.24 x 0.09in 45 ns DN2470 30 ns - 6.1mm 2.29mm 6.6mm 1.8V - +150 °C 2 -55 °C - -
TN2540N8-G N-Channel MOSFET, 260 mA, 400 (Minimum) V TN2540, 3-Pin TO-243AA Microchip Technology Microchip Technology N 260 mA 400 (Minimum) V 12 Ω 2V 0.6V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 95 pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns TN2540 20 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
TP2540N8-G P-Channel MOSFET, 125 mA, 400 (Minimum) V TP2540, 3-Pin TO-243AA Microchip Technology Microchip Technology P 125 mA 400 (Minimum) V 30 Ω 2.4V 1V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 60 pF @ -25 V - 4.6 x 2.6 x 1.6mm 20 (Maximum) ns TP2540 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
VN2460N8-G N-Channel MOSFET, 200 mA, 600 (Minimum) V VN2460, 3-Pin TO-243AA Microchip Technology Microchip Technology N 200 mA 600 (Minimum) V 25 Ω 4V 1.5V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 150 (Maximum) pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns VN2460 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.5V - +150 °C 1 -55 °C - -
VP2450N8-G P-Channel MOSFET, 160 mA, 500 (Minimum) V VP2450, 3-Pin SOT-89 Microchip Technology Microchip Technology P 160 mA 500 (Minimum) V 35 Ω 3.5V 1.5V 20 V SOT-89 Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 190 (Maximum) pF @ -25 V - 4.6 x 2.6 x 1.6mm 45 (Maximum) ns VP2450 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
2N7000-G N-Channel MOSFET, 200 mA, 60 (Minimum) V 2N7000, 3-Pin TO-92 Microchip Technology Microchip Technology N 200 mA 60 (Minimum) V 5.3 Ω 3V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 60 (Maximum) pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns 2N7000 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.85V - +150 °C 1 -55 °C - -
FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V IPAK Through Hole 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.8 x 2.5 x 6.3mm 34 ns - 12 ns 6s 2.5mm 6.3mm 6.8mm 1.2V - +150 °C 1 -55 °C - -
DN2625K4-G Dual N-Channel MOSFET, 1.1 A, 250 V Depletion DN2625, 4-Pin DPAK Microchip Technology Microchip Technology N 1.1 A 250 V 3.5 Ω - - 20 V TO-252 Surface Mount 4 Single Depletion - - 800 pF @ 25 V 7.04 @ 1.5 V 0.26 x 0.24 x 0.09in 10 ns DN2625 10 ns - 6.1mm 2.29mm 6.6mm 1.8V - +150 °C 2 -55 °C - -
VN10KN3-G N-Channel MOSFET, 310 mA, 60 (Minimum) V VN10K, 3-Pin TO-92 Microchip Technology Microchip Technology N 310 mA 60 (Minimum) V 7.5 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 48 pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns VN10K 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.8V - +150 °C 1 -55 °C - -
TN0106N3-G N-Channel MOSFET, 350 mA, 60 (Minimum) V TN0106, 3-Pin TO-92 Microchip Technology Microchip Technology N 350 mA 60 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0106 2 ns - 4.06mm 5.33mm 5.08mm 1.5V - +150 °C 1 -55 °C - -
VN2106N3-G N-Channel MOSFET, 300 mA, 60 (Minimum) V VN2106, 3-Pin TO-92 Microchip Technology Microchip Technology N 300 mA 60 (Minimum) V 6 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 35 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN2106 3 ns - 4.06mm 5.33mm 5.08mm 1.8V - +150 °C 1 -55 °C - -
MOSFET, P-CHANNEL ENHANCEMENT-MODE, -60V Microchip Technology - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
TN0110N3-G N-Channel MOSFET, 350 mA, 100 (Minimum) V TN0110, 3-Pin TO-92 Microchip Technology Microchip Technology N 350 mA 100 (Minimum) V 4.5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 50 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN0110 2 ns - 4.06mm 5.33mm 5.08mm 1.5V - +150 °C 1 -55 °C - -
TN2106N3-G N-Channel MOSFET, 300 mA, 60 (Minimum) V TN2106, 3-Pin TO-92 Microchip Technology Microchip Technology N 300 mA 60 (Minimum) V 5 Ω 2V 0.6V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 740 mW 35 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns TN2106 3 ns - 4.06mm 5.33mm 5.08mm 1.8V - +150 °C 1 -55 °C - -
VN0104N3-G N-Channel MOSFET, 350 mA, 40 (Minimum) V VN0104, 3-Pin TO-92 Microchip Technology Microchip Technology N 350 mA 40 (Minimum) V 5 Ω 2.4V 0.8V 20 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 55 pF @ 25 V - 0.2 x 0.16 x 0.21in 6 ns VN0104 3 ns - 4.06mm 5.33mm 5.08mm 1.8V - +150 °C 1 -55 °C - -
VN0300L-G N-Channel MOSFET, 640 mA, 30 (Minimum) V VN0300, 3-Pin TO-92 Microchip Technology Microchip Technology N 640 mA 30 (Minimum) V 3.3 Ω 2.5V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 190 (Maximum) pF @ 20 V - 0.2 x 0.16 x 0.21in 30 (Maximum) ns VN0300 30 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.9V - +150 °C 1 -55 °C - -
2N6661 N-Channel MOSFET, 350 mA, 90 (Minimum) V 2N6661, 3-Pin TO-39 Microchip Technology Microchip Technology N 350 mA 90 (Minimum) V 5 Ω 2V 0.8V 20 V TO-39 Through Hole 3 Single Enhancement Driver MOSFET 6.25 W 50 (Maximum) pF @ 24 V - 0.37 (Dia.) x 0.26in 10 (Maximum) ns 2N6661 10 (Maximum) ns - 9.398 Dia.mm 6.6mm - 1.2V - +150 °C 1 -55 °C - -
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