SiC N-Channel MOSFET, 42 A, 1200 V, 3-Pin TO-247 Wolfspeed CMF20120D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.8V
Minimum Gate Threshold Voltage
3.2V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+135 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
90.8 nC @ 0/20 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.5V
Aukštis
21.1mm
Kilmės šalis
China
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P.O.A.
1
P.O.A.
1
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Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.8V
Minimum Gate Threshold Voltage
3.2V
Maximum Power Dissipation
215 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+135 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
90.8 nC @ 0/20 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.5V
Aukštis
21.1mm
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products