Hex SiC N-Channel MOSFET, 29 A, 1200 V, 28-Pin Module Wolfspeed CCS020M12CM2
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Module
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
47mm
Transistor Material
SiC
Number of Elements per Chip
6
Maksimali darbinė temperatūra
+150 °C
Ilgis
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Aukštis
17mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
2.3V
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 370,50
už 1 vnt. (be PVM)
€ 448,30
už 1 vnt. (su PVM)
1
€ 370,50
už 1 vnt. (be PVM)
€ 448,30
už 1 vnt. (su PVM)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
29 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Module
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
28
Maximum Drain Source Resistance
208 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
167 W
Transistor Configuration
3 Phase
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
47mm
Transistor Material
SiC
Number of Elements per Chip
6
Maksimali darbinė temperatūra
+150 °C
Ilgis
108mm
Typical Gate Charge @ Vgs
61.5 nC @ 20 V, 61.5 nC @ 5 V
Aukštis
17mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
2.3V
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products