Dual SiC N-Channel MOSFET, 404 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS300M12BM2
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
404 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Half Bridge
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.66 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
61.4mm
Transistor Material
SiC
Maksimali darbinė temperatūra
+150 °C
Ilgis
106.4mm
Typical Gate Charge @ Vgs
1025 nC @ 20 V, 1025 nC @ 5 V
Number of Elements per Chip
2
Forward Diode Voltage
2.5V
Aukštis
30mm
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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€ 992,25
už 1 vnt. (be PVM)
€ 1 200,62
už 1 vnt. (su PVM)
1
€ 992,25
už 1 vnt. (be PVM)
€ 1 200,62
už 1 vnt. (su PVM)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
404 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Half Bridge
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
9.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
1.66 kW
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
61.4mm
Transistor Material
SiC
Maksimali darbinė temperatūra
+150 °C
Ilgis
106.4mm
Typical Gate Charge @ Vgs
1025 nC @ 20 V, 1025 nC @ 5 V
Number of Elements per Chip
2
Forward Diode Voltage
2.5V
Aukštis
30mm
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products