Dual SiC N-Channel MOSFET, 193 A, 1200 V, 7-Pin Half Bridge Wolfspeed CAS120M12BM2
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Half Bridge
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Ilgis
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
30mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
2.4V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
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€ 556,50
Each (In a Box of 10) (be PVM)
€ 673,365
Each (In a Box of 10) (su PVM)
10
€ 556,50
Each (In a Box of 10) (be PVM)
€ 673,365
Each (In a Box of 10) (su PVM)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
193 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
Half Bridge
Tvirtinimo tipas
Screw Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
30 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
925 W
Transistor Configuration
Series
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
61.4mm
Number of Elements per Chip
2
Transistor Material
SiC
Ilgis
106.4mm
Typical Gate Charge @ Vgs
378 nC @ 20 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
30mm
Minimali darbinė temperatūra
-40 °C
Forward Diode Voltage
2.4V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFET Modules
Silicon Carbide power MOSFET modules from Wolfspeed, the power division of Cree Inc. These SiC MOSFET modules are housed in industrial standard packages and are available in Half-bridge (2 MOSFETs) and 3-phase (6 MOSFETs) formats; they also include SiC reverse recovery diodes. Typical applications include induction heating, solar and wind inverters, DC-DC converters, 3-phase PFC, line regeneration drives, UPS & SMPS, motor drives and battery chargers.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products