SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

RS kodas: 192-3386Gamintojas: WolfspeedGamintojo kodas: CAB450M12XM3
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

SiC

Ilgis

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Plotis

53mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-40 °C

Aukštis

15.75mm

Kilmės šalis

United States

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€ 1 092,50

už 1 vnt. (be PVM)

€ 1 321,92

už 1 vnt. (su PVM)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3

1

Galima įsigyti kartotiną kiekį 1
1€ 1 092,50
2€ 2 185,00
3€ 3 277,50
4€ 4 370,00
5€ 5 462,50
6€ 6 555,00
7€ 7 647,50
8€ 8 740,00
9€ 9 832,50
10€ 10 925,00
11€ 12 017,50
12€ 13 110,00
13€ 14 202,50
14€ 15 295,00
15€ 16 387,50
sticker-462

€ 1 092,50

už 1 vnt. (be PVM)

€ 1 321,92

už 1 vnt. (su PVM)

SiC MOSFET, 1200 V Wolfspeed CAB450M12XM3
Sandėlio informacija laikinai nepasiekiama.

1

Galima įsigyti kartotiną kiekį 1
1€ 1 092,50
2€ 2 185,00
3€ 3 277,50
4€ 4 370,00
5€ 5 462,50
6€ 6 555,00
7€ 7 647,50
8€ 8 740,00
9€ 9 832,50
10€ 10 925,00
11€ 12 017,50
12€ 13 110,00
13€ 14 202,50
14€ 15 295,00
15€ 16 387,50
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Maximum Drain Source Voltage

1200 V

Maximum Drain Source Resistance

4.6 mΩ

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 mW

Maximum Gate Source Voltage

-4 V, 19 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

SiC

Ilgis

80mm

Typical Gate Charge @ Vgs

1330 nC @ 4/15V

Plotis

53mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-40 °C

Aukštis

15.75mm

Kilmės šalis

United States

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more