SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
SiC
Ilgis
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Plotis
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Aukštis
5.21mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 4,935
Each (In a Tube of 30) (be PVM)
€ 5,971
Each (In a Tube of 30) (su PVM)
30
€ 4,935
Each (In a Tube of 30) (be PVM)
€ 5,971
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 30 - 120 | € 4,935 | € 148,05 |
| 150 - 270 | € 4,778 | € 143,32 |
| 300+ | € 4,672 | € 140,18 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
11.5 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Maksimali darbinė temperatūra
+150 °C
Transistor Material
SiC
Ilgis
16.13mm
Typical Gate Charge @ Vgs
9.5 nC @ 15 V
Plotis
21.1mm
Number of Elements per Chip
1
Forward Diode Voltage
4.8V
Aukštis
5.21mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products