SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J

RS kodas: 192-3492Gamintojas: WolfspeedGamintojo kodas: C3M0120090J
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-263-7

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Plotis

9.12mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Kilmės šalis

China

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€ 10,29

Each (In a Pack of 2) (be PVM)

€ 12,451

Each (In a Pack of 2) (su PVM)

SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J
sticker-462

€ 10,29

Each (In a Pack of 2) (be PVM)

€ 12,451

Each (In a Pack of 2) (su PVM)

SiC N-Channel MOSFET, 22 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0120090J
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 18€ 10,29€ 20,58
20+€ 10,185€ 20,37

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

900 V

Pakuotės tipas

TO-263-7

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

83 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

10.23mm

Typical Gate Charge @ Vgs

17.3 nC @ 4/15V

Plotis

9.12mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

4.57mm

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more