SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K

RS kodas: 192-3375Gamintojas: WolfspeedGamintojo kodas: C3M0075120K
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

53 nC @ 4/15V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

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€ 15,645

Each (In a Tube of 30) (be PVM)

€ 18,93

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K
sticker-462

€ 15,645

Each (In a Tube of 30) (be PVM)

€ 18,93

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 30 A, 1200 V, 4-Pin TO-247-4 Wolfspeed C3M0075120K
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

1200 V

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.6V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

53 nC @ 4/15V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more