SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K

RS kodas: 168-4886Gamintojas: WolfspeedGamintojo kodas: C3M0065100K
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Serija

C3M

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

4.8V

Kilmės šalis

China

Produkto aprašymas

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

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€ 19,32

Each (In a Tube of 30) (be PVM)

€ 23,377

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
sticker-462

€ 19,32

Each (In a Tube of 30) (be PVM)

€ 23,377

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Serija

C3M

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Maximum Gate Source Voltage

-8 V, +19 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

35 nC @ 15 V, 35 nC @ 4 V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

4.8V

Kilmės šalis

China

Produkto aprašymas

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more