SiC N-Channel MOSFET, 35 A, 1000 V, 4-Pin TO-247-4 Wolfspeed C3M0065100K
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Serija
C3M
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Ilgis
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.21mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
4.8V
Aukštis
23.6mm
Produkto aprašymas
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 23,52
už 1 vnt. (be PVM)
€ 28,46
už 1 vnt. (su PVM)
1
€ 23,52
už 1 vnt. (be PVM)
€ 28,46
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 24 | € 23,52 |
| 25 - 74 | € 21,42 |
| 75 - 149 | € 20,90 |
| 150+ | € 20,37 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
1000 V
Serija
C3M
Pakuotės tipas
TO-247-4
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
113.5 W
Maximum Gate Source Voltage
-8 V, +19 V
Transistor Material
SiC
Ilgis
16.13mm
Typical Gate Charge @ Vgs
35 nC @ 15 V, 35 nC @ 4 V
Maksimali darbinė temperatūra
+150 °C
Plotis
5.21mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
4.8V
Aukštis
23.6mm
Produkto aprašymas
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
MOSFET Transistors, Cree Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products