SiC N-Channel MOSFET, 35 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0065100J

RS kodas: 192-3515Gamintojas: WolfspeedGamintojo kodas: C3M0065100J
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Plotis

9.12mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

10.23mm

Typical Gate Charge @ Vgs

35 nC @ 4/15V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 14,91

už 1 vnt. (be PVM)

€ 18,04

už 1 vnt. (su PVM)

SiC N-Channel MOSFET, 35 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0065100J
sticker-462

€ 14,91

už 1 vnt. (be PVM)

€ 18,04

už 1 vnt. (su PVM)

SiC N-Channel MOSFET, 35 A, 1000 V, 7-Pin D2PAK Wolfspeed C3M0065100J
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

1000 V

Pakuotės tipas

TO-263

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

113.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 19 V

Plotis

9.12mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

10.23mm

Typical Gate Charge @ Vgs

35 nC @ 4/15V

Aukštis

4.57mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more