SiC N-Channel MOSFET, 36 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0065090D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Plotis
21.1mm
Transistor Material
SiC
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
5.21mm
Forward Diode Voltage
4.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 20,48
už 1 vnt. (be PVM)
€ 24,78
už 1 vnt. (su PVM)
1
€ 20,48
už 1 vnt. (be PVM)
€ 24,78
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina |
|---|---|
| 1 - 4 | € 20,48 |
| 5 - 9 | € 19,32 |
| 10 - 29 | € 18,90 |
| 30 - 89 | € 18,27 |
| 90+ | € 17,85 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
36 A
Maximum Drain Source Voltage
900 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +18 V
Number of Elements per Chip
1
Ilgis
16.13mm
Typical Gate Charge @ Vgs
30.4 nC @ 15 V
Plotis
21.1mm
Transistor Material
SiC
Maksimali darbinė temperatūra
+150 °C
Minimali darbinė temperatūra
-55 °C
Aukštis
5.21mm
Forward Diode Voltage
4.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products