Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
10.99mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
SiC
Ilgis
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 9,24
Each (In a Tube of 50) (be PVM)
€ 11,18
Each (In a Tube of 50) (su PVM)
50
€ 9,24
Each (In a Tube of 50) (be PVM)
€ 11,18
Each (In a Tube of 50) (su PVM)
50
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
7
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +25 V
Plotis
10.99mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
SiC
Ilgis
10.23mm
Typical Gate Charge @ Vgs
13 nC @ 20 V
Aukštis
4.57mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.