Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Aukštis
21.1mm
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 12,39
už 1 vnt. (be PVM)
€ 14,99
už 1 vnt. (su PVM)
1
€ 12,39
už 1 vnt. (be PVM)
€ 14,99
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 4 | € 12,39 |
5 - 9 | € 11,66 |
10 - 29 | € 11,44 |
30 - 89 | € 11,13 |
90+ | € 10,82 |
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
1700 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.1V
Minimum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
69 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
13 nC @ 20 V, 13 nC @ 5 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.8V
Aukštis
21.1mm
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.