SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Plotis
21.1mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Aukštis
5.21mm
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 7,875
Each (In a Pack of 2) (be PVM)
€ 9,529
Each (In a Pack of 2) (su PVM)
2
€ 7,875
Each (In a Pack of 2) (be PVM)
€ 9,529
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 8 | € 7,875 | € 15,75 |
| 10 - 28 | € 7,35 | € 14,70 |
| 30 - 58 | € 7,245 | € 14,49 |
| 60 - 118 | € 7,035 | € 14,07 |
| 120+ | € 6,825 | € 13,65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Plotis
21.1mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Aukštis
5.21mm
Kilmės šalis
China
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products