SiC N-Channel MOSFET, 40 A, 1700 V, 4-Pin TO-247 Wolfspeed C2M0080170P

RS kodas: 192-3368Gamintojas: WolfspeedGamintojo kodas: C2M0080170P
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Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

1700 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

277 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, 25 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

120 nC @ 5/20V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

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€ 41,895

Each (In a Tube of 30) (be PVM)

€ 50,693

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 40 A, 1700 V, 4-Pin TO-247 Wolfspeed C2M0080170P
sticker-462

€ 41,895

Each (In a Tube of 30) (be PVM)

€ 50,693

Each (In a Tube of 30) (su PVM)

SiC N-Channel MOSFET, 40 A, 1700 V, 4-Pin TO-247 Wolfspeed C2M0080170P
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Wolfspeed

Channel Type

N

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

1700 V

Pakuotės tipas

TO-247

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

277 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, 25 V

Plotis

5.21mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

SiC

Ilgis

16.13mm

Typical Gate Charge @ Vgs

120 nC @ 5/20V

Aukštis

23.6mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more