Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Aukštis
21.1mm
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Patikrinkite dar kartą.
€ 54,08
už 1 vnt. (be PVM)
€ 65,44
už 1 vnt. (su PVM)
1
€ 54,08
už 1 vnt. (be PVM)
€ 65,44
už 1 vnt. (su PVM)
1
Pirkti dideliais kiekiais
kiekis | Vieneto kaina |
---|---|
1 - 4 | € 54,08 |
5 - 9 | € 50,82 |
10 - 29 | € 49,56 |
30 - 59 | € 48,30 |
60+ | € 47,04 |
Techniniai dokumentai
Specifikacijos
Markė
WolfspeedChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
1200 V
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
52 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-5 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
16.13mm
Typical Gate Charge @ Vgs
115 nC @ 20 V, 115 nC @ 5 V
Plotis
5.21mm
Transistor Material
SiC
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
3.3V
Aukštis
21.1mm
Produkto aprašymas
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.