Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 228,00
€ 9,12 Each (In a Tube of 25) (be PVM)
€ 275,88
€ 11,035 Each (In a Tube of 25) (su PVM)
25

€ 228,00
€ 9,12 Each (In a Tube of 25) (be PVM)
€ 275,88
€ 11,035 Each (In a Tube of 25) (su PVM)
25

Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
25 - 25 | € 9,12 | € 228,00 |
50 - 100 | € 8,17 | € 204,25 |
125+ | € 7,695 | € 192,38 |
Techniniai dokumentai
Specifikacijos
Markė
VishayTvirtinimo tipas
Through Hole
Pakuotės tipas
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Kaiščių skaičius
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Produkto aprašymas
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.