Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount

RS kodas: 748-1112Gamintojas: VishayGamintojo kodas: VS-GB75YF120UT
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Configuration

Dual Half Bridge

Pakuotės tipas

ECONO2

Tvirtinimo tipas

PCB Mount

Channel Type

N

Kaiščių skaičius

35

Transistor Configuration

Dual Half Bridge

Ilgis

107.8mm

Matmenys

107.8 x 45.4 x 13.2mm

Maksimali darbinė temperatūra

+150 °C

Plotis

45.4mm

Kilmės šalis

Italy

Produkto aprašymas

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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€ 233,10

už 1 vnt. (be PVM)

€ 282,05

už 1 vnt. (su PVM)

Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
Pasirinkite pakuotės tipą
sticker-462

€ 233,10

už 1 vnt. (be PVM)

€ 282,05

už 1 vnt. (su PVM)

Vishay VS-GB75YF120UT Dual Half Bridge IGBT Module, 100 A 1200 V, 35-Pin ECONO2, PCB Mount
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 1€ 233,10
2 - 4€ 210,00
5+€ 185,85

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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

480 W

Configuration

Dual Half Bridge

Pakuotės tipas

ECONO2

Tvirtinimo tipas

PCB Mount

Channel Type

N

Kaiščių skaičius

35

Transistor Configuration

Dual Half Bridge

Ilgis

107.8mm

Matmenys

107.8 x 45.4 x 13.2mm

Maksimali darbinė temperatūra

+150 °C

Plotis

45.4mm

Kilmės šalis

Italy

Produkto aprašymas

IGBT Modules, Vishay

Vishay’s high-efficiency IGBT modules come with a choice of PT, NPT, and Trench IGBT technologies. The range includes single switches, inverters, choppers, half-bridges, or in custom configurations. These IGBT Modules are designed to be used as a main switching device in switch mode power supplies, uninterruptible power supplies, industrial welding, motor drives, and power factor correction systems.

Typical applications include boost and buck converters, forward and double forward converters, half bridges, full bridges (H-bridge), and three-phase bridges.

IGBT Modules, Vishay

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.