Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 14,72
€ 2,945 Each (In a Pack of 5) (be PVM)
€ 17,81
€ 3,563 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 14,72
€ 2,945 Each (In a Pack of 5) (be PVM)
€ 17,81
€ 3,563 Each (In a Pack of 5) (su PVM)
Standartas
5
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 2,945 | € 14,72 |
| 50 - 120 | € 2,185 | € 10,92 |
| 125 - 245 | € 1,995 | € 9,98 |
| 250 - 495 | € 1,758 | € 8,79 |
| 500+ | € 1,615 | € 8,08 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maksimali darbinė temperatūra
+175 °C
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Kilmės šalis
Taiwan, Province Of China
Produkto aprašymas
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products