N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220AB Vishay SUP50020E-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Ilgis
10.51mm
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Produkto aprašymas
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Patikrinkite dar kartą.
€ 3,412
Each (In a Pack of 2) (be PVM)
€ 4,129
Each (In a Pack of 2) (su PVM)
2
€ 3,412
Each (In a Pack of 2) (be PVM)
€ 4,129
Each (In a Pack of 2) (su PVM)
2
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 2 - 18 | € 3,412 | € 6,82 |
| 20 - 98 | € 3,202 | € 6,40 |
| 100 - 198 | € 2,888 | € 5,78 |
| 200 - 498 | € 2,73 | € 5,46 |
| 500+ | € 2,572 | € 5,14 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
4.65mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Typical Gate Charge @ Vgs
126 nC @ 10 V
Ilgis
10.51mm
Aukštis
15.49mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.5V
Produkto aprašymas
N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products