N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3

RS kodas: 134-9166Gamintojas: VishayGamintojo kodas: SUM50020E-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Typical Gate Charge @ Vgs

126 nC @ 10 V

Aukštis

4.82mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Produkto aprašymas

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,526

Each (On a Reel of 800) (be PVM)

€ 0,636

Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3
sticker-462

€ 0,526

Each (On a Reel of 800) (be PVM)

€ 0,636

Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 120 A, 60 V, 8-Pin D2PAK Vishay SUM50020E-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

9.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Typical Gate Charge @ Vgs

126 nC @ 10 V

Aukštis

4.82mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Produkto aprašymas

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more