P-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK Vishay SUD50P06-15-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-252AA
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
6.22mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
Forward Diode Voltage
-1.6V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,992
Each (In a Pack of 5) (be PVM)
€ 3,62
Each (In a Pack of 5) (su PVM)
5
€ 2,992
Each (In a Pack of 5) (be PVM)
€ 3,62
Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 2,992 | € 14,96 |
| 50 - 120 | € 2,73 | € 13,65 |
| 125 - 245 | € 2,572 | € 12,86 |
| 250 - 495 | € 2,258 | € 11,29 |
| 500+ | € 2,10 | € 10,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-252AA
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-3V
Minimum Gate Threshold Voltage
-1V
Maximum Power Dissipation
113 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Plotis
6.22mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
Forward Diode Voltage
-1.6V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products