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Vishay N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK SQM50034E_GE3

RS kodas: 188-4923Gamintojas: VishayGamintojo kodas: SQM50034E_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

9.65mm

Ilgis

10.41mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

4.57mm

Automotive Standard

AEC-Q101

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Sandėlio informacija laikinai nepasiekiama.

€ 760,00

€ 0,95 Each (On a Reel of 800) (be PVM)

€ 919,60

€ 1,15 Each (On a Reel of 800) (su PVM)

Vishay N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK SQM50034E_GE3
sticker-462

€ 760,00

€ 0,95 Each (On a Reel of 800) (be PVM)

€ 919,60

€ 1,15 Each (On a Reel of 800) (su PVM)

Vishay N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK SQM50034E_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

7.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Plotis

9.65mm

Ilgis

10.41mm

Typical Gate Charge @ Vgs

58 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Aukštis

4.57mm

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more