P-Channel MOSFET, 3 A, 12 V, 3-Pin SOT-23 Vishay SQ2315ES-T1_GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Serija
SQ Rugged
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,586
Each (In a Pack of 20) (be PVM)
€ 0,709
Each (In a Pack of 20) (su PVM)
20
€ 0,586
Each (In a Pack of 20) (be PVM)
€ 0,709
Each (In a Pack of 20) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 180 | € 0,586 | € 11,72 |
| 200 - 480 | € 0,469 | € 9,39 |
| 500 - 980 | € 0,381 | € 7,62 |
| 1000 - 1980 | € 0,294 | € 5,88 |
| 2000+ | € 0,235 | € 4,70 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
92 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Serija
SQ Rugged
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products