Dual N-Channel MOSFET, 38 A, 60 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ250DT-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Serija
TrenchFET® Gen IV
Pakuotės tipas
PowerPAIR 3 x 3FDC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.0122 Ω, 0.0127 Ω, 0.01811 Ω, 0.01887 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
2
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€ 0,529
Each (On a Reel of 3000) (be PVM)
€ 0,64
Each (On a Reel of 3000) (su PVM)
3000
€ 0,529
Each (On a Reel of 3000) (be PVM)
€ 0,64
Each (On a Reel of 3000) (su PVM)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
60 V
Serija
TrenchFET® Gen IV
Pakuotės tipas
PowerPAIR 3 x 3FDC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
0.0122 Ω, 0.0127 Ω, 0.01811 Ω, 0.01887 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products