Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3

RS kodas: 188-4905Gamintojas: VishayGamintojo kodas: SiSS61DN-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

111.9 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerPAK 1212-8S

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Plotis

3.3mm

Ilgis

3.3mm

Typical Gate Charge @ Vgs

154 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.78mm

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Sandėlio informacija laikinai nepasiekiama.

€ 1 265,40

€ 0,422 Each (On a Reel of 3000) (be PVM)

€ 1 531,13

€ 0,511 Each (On a Reel of 3000) (su PVM)

Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3
sticker-462

€ 1 265,40

€ 0,422 Each (On a Reel of 3000) (be PVM)

€ 1 531,13

€ 0,511 Each (On a Reel of 3000) (su PVM)

Vishay P-Channel MOSFET, 111.9 A, 20 V, 8-Pin PowerPAK 1212-8S SiSS61DN-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

111.9 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerPAK 1212-8S

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

65.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Number of Elements per Chip

1

Plotis

3.3mm

Ilgis

3.3mm

Typical Gate Charge @ Vgs

154 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.78mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more