Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3

RS kodas: 919-4299Gamintojas: VishayGamintojo kodas: SISS27DN-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK 1212-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.78mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 926,25

€ 0,309 Each (On a Reel of 3000) (be PVM)

€ 1 120,76

€ 0,374 Each (On a Reel of 3000) (su PVM)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
sticker-462

€ 926,25

€ 0,309 Each (On a Reel of 3000) (be PVM)

€ 1 120,76

€ 0,374 Each (On a Reel of 3000) (su PVM)

Vishay TrenchFET P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK 1212-8

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

3.3mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

3.3mm

Typical Gate Charge @ Vgs

92 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.78mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more