P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3

RS kodas: 814-1304PGamintojas: VishayGamintojo kodas: SIS415DNT-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,265

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,321

Už kiekviena vnt. (tiekiama riteje) (su PVM)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,265

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,321

Už kiekviena vnt. (tiekiama riteje) (su PVM)

P-Channel MOSFET, 22 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SIS415DNT-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Plotis

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.8mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more