N-Channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay SIR626DP-T1-RE3

RS kodas: 134-9720Gamintojas: VishayGamintojo kodas: SIR626DP-T1-RE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SO

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.26mm

Number of Elements per Chip

1

Ilgis

6.25mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.12mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Produkto aprašymas

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,929

Each (In a Pack of 5) (be PVM)

€ 1,124

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay SIR626DP-T1-RE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,929

Each (In a Pack of 5) (be PVM)

€ 1,124

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 100 A, 60 V, 8-Pin SO Vishay SIR626DP-T1-RE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SO

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.26mm

Number of Elements per Chip

1

Ilgis

6.25mm

Typical Gate Charge @ Vgs

68 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.12mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.1V

Produkto aprašymas

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more