Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 105.00
€ 1.05 Each (Supplied on a Reel) (Exc. Vat)
€ 127.05
€ 1.27 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
100

€ 105.00
€ 1.05 Each (Supplied on a Reel) (Exc. Vat)
€ 127.05
€ 1.27 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100

Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 240 | € 1.05 | € 10.50 |
| 250 - 490 | € 0.926 | € 9.26 |
| 500 - 990 | € 0.891 | € 8.91 |
| 1000+ | € 0.87 | € 8.70 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
23 A
Maximum Drain Source Voltage
40 V
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
39 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.26mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.25mm
Typical Gate Charge @ Vgs
50 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.12mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


