N-Channel MOSFET, 8.7 A, 500 V, 3-Pin TO-220AB Vishay SIHP8N50D-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
4.65mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
9.01mm
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 6,89
€ 1,378 Each (In a Pack of 5) (be PVM)
€ 8,34
€ 1,667 Each (In a Pack of 5) (su PVM)
Standartas
5
€ 6,89
€ 1,378 Each (In a Pack of 5) (be PVM)
€ 8,34
€ 1,667 Each (In a Pack of 5) (su PVM)
Standartas
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 1,378 | € 6,89 |
| 50 - 120 | € 1,235 | € 6,18 |
| 125 - 245 | € 1,092 | € 5,46 |
| 250 - 495 | € 0,998 | € 4,99 |
| 500+ | € 0,95 | € 4,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8.7 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
TO-220AB
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.51mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Plotis
4.65mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
9.01mm
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products