N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3

RS kodas: 145-1660Gamintojas: VishayGamintojo kodas: SIHP6N40D-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Serija

D Series

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 44,13

€ 0,883 Each (In a Tube of 50) (be PVM)

€ 53,40

€ 1,068 Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
sticker-462

€ 44,13

€ 0,883 Each (In a Tube of 50) (be PVM)

€ 53,40

€ 1,068 Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 6 A, 400 V, 3-Pin TO-220AB Vishay SIHP6N40D-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 0,883€ 44,13
100 - 200€ 0,697€ 34,86
250+€ 0,618€ 30,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

400 V

Serija

D Series

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.65mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.51mm

Typical Gate Charge @ Vgs

9 nC @ 10 V

Aukštis

9.01mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more