N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-220AB Vishay SIHP065N60E-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220AB
Serija
E Series
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Plotis
4.65mm
Number of Elements per Chip
1
Aukštis
15.49mm
Forward Diode Voltage
1.2V
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
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€ 5,985
Each (In a Tube of 50) (be PVM)
€ 7,242
Each (In a Tube of 50) (su PVM)
50
€ 5,985
Each (In a Tube of 50) (be PVM)
€ 7,242
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 5,985 | € 299,25 |
| 100+ | € 5,67 | € 283,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220AB
Serija
E Series
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.51mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Plotis
4.65mm
Number of Elements per Chip
1
Aukštis
15.49mm
Forward Diode Voltage
1.2V
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products