N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3

RS kodas: 145-1829Gamintojas: VishayGamintojo kodas: SIHG25N40D-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Serija

D Series

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 74,81

€ 2,992 Each (In a Tube of 25) (be PVM)

€ 90,52

€ 3,62 Each (In a Tube of 25) (su PVM)

N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3
sticker-462

€ 74,81

€ 2,992 Each (In a Tube of 25) (be PVM)

€ 90,52

€ 3,62 Each (In a Tube of 25) (su PVM)

N-Channel MOSFET, 25 A, 400 V, 3-Pin TO-247AC Vishay SIHG25N40D-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
25 - 25€ 2,992€ 74,81
50 - 100€ 2,802€ 70,06
125+€ 2,565€ 64,12

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

400 V

Serija

D Series

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.87mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more