N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP Vishay SIHF28N60EF-GE3

RS kodas: 178-0896Gamintojas: VishayGamintojo kodas: SIHF28N60EF-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Serija

EF Series

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.83mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.63mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Aukštis

16.12mm

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 3,675

Each (In a Tube of 50) (be PVM)

€ 4,447

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP Vishay SIHF28N60EF-GE3
sticker-462

€ 3,675

Each (In a Tube of 50) (be PVM)

€ 4,447

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP Vishay SIHF28N60EF-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Serija

EF Series

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

39 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Plotis

4.83mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.63mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Aukštis

16.12mm

Forward Diode Voltage

1.2V

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more