N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK Vishay SIHD3N50D-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6 nC @ 10 V
Plotis
6.22mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 3,26
€ 0,653 Each (In a Pack of 5) (be PVM)
€ 3,95
€ 0,79 Each (In a Pack of 5) (su PVM)
5
€ 3,26
€ 0,653 Each (In a Pack of 5) (be PVM)
€ 3,95
€ 0,79 Each (In a Pack of 5) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 5 - 45 | € 0,653 | € 3,26 |
| 50 - 95 | € 0,54 | € 2,70 |
| 100 - 245 | € 0,495 | € 2,47 |
| 250 - 495 | € 0,467 | € 2,34 |
| 500+ | € 0,452 | € 2,26 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Serija
D Series
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
3.2 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
6 nC @ 10 V
Plotis
6.22mm
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
Produkto aprašymas
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products