N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3

RS kodas: 903-4504Gamintojas: VishayGamintojo kodas: SiHB28N60EF-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

D2PAK (TO-263)

Serija

EF Series

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,47

Each (In a Pack of 2) (be PVM)

€ 2,989

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 2,47

Each (In a Pack of 2) (be PVM)

€ 2,989

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 28 A, 600 V, 3-Pin D2PAK Vishay SiHB28N60EF-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

D2PAK (TO-263)

Serija

EF Series

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

123 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Typical Gate Charge @ Vgs

80 nC @ 10 V

Plotis

9.65mm

Transistor Material

Si

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

4.83mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more