N-Channel MOSFET, 13 A, 800 V, 3-Pin D2PAK Vishay SIHB15N80AE-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
800 V
Serija
E
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.304 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 2,138
Each (In a Tube of 50) (be PVM)
€ 2,587
Each (In a Tube of 50) (su PVM)
50
€ 2,138
Each (In a Tube of 50) (be PVM)
€ 2,587
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 2,138 | € 106,88 |
| 100 - 200 | € 1,71 | € 85,50 |
| 250+ | € 1,472 | € 73,62 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
800 V
Serija
E
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.304 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products