N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Serija
E
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
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€ 42,84
€ 0,857 Each (In a Tube of 50) (be PVM)
€ 51,84
€ 1,037 Each (In a Tube of 50) (su PVM)
50
€ 42,84
€ 0,857 Each (In a Tube of 50) (be PVM)
€ 51,84
€ 1,037 Each (In a Tube of 50) (su PVM)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
800 V
Serija
E
Pakuotės tipas
D2PAK (TO-263)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
0.391 Ω
Maximum Gate Threshold Voltage
2 → 4V
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products