Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 10,43
€ 0,522 Each (In a Pack of 20) (be PVM)
€ 12,62
€ 0,632 Each (In a Pack of 20) (su PVM)
Standartas
20
€ 10,43
€ 0,522 Each (In a Pack of 20) (be PVM)
€ 12,62
€ 0,632 Each (In a Pack of 20) (su PVM)
Standartas
20
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 180 | € 0,522 | € 10,43 |
| 200 - 480 | € 0,46 | € 9,20 |
| 500 - 980 | € 0,386 | € 7,71 |
| 1000 - 1980 | € 0,366 | € 7,32 |
| 2000+ | € 0,313 | € 6,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Pakuotės tipas
SOT-363
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Ilgis
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
0.8mm
Minimali darbinė temperatūra
-55 °C
Kilmės šalis
China
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products