Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3

RS kodas: 188-5019Gamintojas: VishayGamintojo kodas: SiA471DJ-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

30.3 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK SC-70

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

19.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Number of Elements per Chip

1

Plotis

2.15mm

Ilgis

2.15mm

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.75mm

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Sandėlio informacija laikinai nepasiekiama.

€ 4,77

€ 0,191 Each (In a Pack of 25) (be PVM)

€ 5,77

€ 0,231 Each (In a Pack of 25) (su PVM)

Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 4,77

€ 0,191 Each (In a Pack of 25) (be PVM)

€ 5,77

€ 0,231 Each (In a Pack of 25) (su PVM)

Vishay P-Channel MOSFET, 30.3 A, 30 V, 6-Pin PowerPAK SC-70 SiA471DJ-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

30.3 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK SC-70

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

19.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +16 V

Number of Elements per Chip

1

Plotis

2.15mm

Ilgis

2.15mm

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

0.75mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more