Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS kodas: 787-8995Gamintojas: VishayGamintojo kodas: SI9945BDY-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,884

Each (In a Pack of 10) (be PVM)

€ 1,07

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,884

Each (In a Pack of 10) (be PVM)

€ 1,07

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,884€ 8,84
100 - 240€ 0,831€ 8,31
250 - 490€ 0,752€ 7,52
500 - 990€ 0,708€ 7,08
1000+€ 0,665€ 6,65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.3 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more