P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3

RS kodas: 710-3386Gamintojas: VishayGamintojo kodas: SI7309DN-T1-E3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.05mm

Plotis

3.05mm

Minimali darbinė temperatūra

-65 °C

Aukštis

1.04mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 1,102

Each (In a Pack of 5) (be PVM)

€ 1,334

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Pasirinkite pakuotės tipą
sticker-462

€ 1,102

Each (In a Pack of 5) (be PVM)

€ 1,334

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 3.9 A, 60 V, 8-Pin PowerPAK 1212-8 Vishay SI7309DN-T1-E3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,102€ 5,51
50 - 245€ 0,772€ 3,86
250 - 495€ 0,684€ 3,42
500 - 1245€ 0,576€ 2,88
1250+€ 0,52€ 2,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

PowerPAK 1212-8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

115 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.05mm

Plotis

3.05mm

Minimali darbinė temperatūra

-65 °C

Aukštis

1.04mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more