Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.07mm
Minimali darbinė temperatūra
-50 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 10,45
€ 1,045 Each (In a Pack of 10) (be PVM)
€ 12,64
€ 1,264 Each (In a Pack of 10) (su PVM)
Standartas
10
€ 10,45
€ 1,045 Each (In a Pack of 10) (be PVM)
€ 12,64
€ 1,264 Each (In a Pack of 10) (su PVM)
Standartas
10
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 90 | € 1,045 | € 10,45 |
| 100 - 240 | € 0,826 | € 8,26 |
| 250 - 490 | € 0,64 | € 6,40 |
| 500 - 990 | € 0,566 | € 5,66 |
| 1000+ | € 0,484 | € 4,84 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
9.6 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
PowerPAK 1212-8
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
26 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
27.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Plotis
3.15mm
Transistor Material
Si
Number of Elements per Chip
1
Ilgis
3.15mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Maksimali darbinė temperatūra
+150 °C
Aukštis
1.07mm
Minimali darbinė temperatūra
-50 °C
Kilmės šalis
China
Produkto aprašymas
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products