Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3

RS kodas: 818-1365Gamintojas: VishayGamintojo kodas: SI5997DU-T1-GE3
brand-logo
View all in MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.08mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Aukštis

0.85mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,341

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,413

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3
sticker-462

€ 0,341

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,413

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

Dual P-Channel MOSFET, 4.1 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5997DU-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Juosta
20 - 180€ 0,341€ 6,82
200 - 380€ 0,304€ 6,09
400+€ 0,30€ 6,01

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

PowerPAK ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

10.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.98mm

Transistor Material

Si

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.08mm

Typical Gate Charge @ Vgs

9.5 nC @ 10 V

Aukštis

0.85mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more