Dual P-Channel MOSFET, 3.8 A, 20 V, 8-Pin 1206 ChipFET Vishay SI5935CDC-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
1206 ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Plotis
1.7mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
China
Produkto aprašymas
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,583
Each (In a Pack of 20) (be PVM)
€ 0,705
Each (In a Pack of 20) (su PVM)
20
€ 0,583
Each (In a Pack of 20) (be PVM)
€ 0,705
Each (In a Pack of 20) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 20 - 180 | € 0,583 | € 11,66 |
| 200 - 480 | € 0,547 | € 10,94 |
| 500 - 980 | € 0,496 | € 9,91 |
| 1000 - 1980 | € 0,465 | € 9,30 |
| 2000+ | € 0,437 | € 8,74 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
1206 ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Plotis
1.7mm
Minimali darbinė temperatūra
-55 °C
Aukštis
1.1mm
Kilmės šalis
China
Produkto aprašymas
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products