Dual N-Channel MOSFET, 3.7 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5902BDC-T1-GE3

RS kodas: 818-1340Gamintojas: VishayGamintojo kodas: SI5902BDC-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1206 ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.12 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Plotis

1.7mm

Number of Elements per Chip

2

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 0,496

Each (In a Pack of 10) (be PVM)

€ 0,60

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 3.7 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5902BDC-T1-GE3
sticker-462

€ 0,496

Each (In a Pack of 10) (be PVM)

€ 0,60

Each (In a Pack of 10) (su PVM)

Dual N-Channel MOSFET, 3.7 A, 30 V, 8-Pin 1206 ChipFET Vishay SI5902BDC-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 40€ 0,496€ 4,96
50+€ 0,485€ 4,85

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1206 ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.12 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

4.5 nC @ 10 V

Plotis

1.7mm

Number of Elements per Chip

2

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more