N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerPAK ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Plotis
1.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Aukštis
0.8mm
Serija
TrenchFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,549
Each (In a Pack of 10) (be PVM)
€ 0,664
Each (In a Pack of 10) (su PVM)
10
€ 0,549
Each (In a Pack of 10) (be PVM)
€ 0,664
Each (In a Pack of 10) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 10 - 40 | € 0,549 | € 5,49 |
| 50 - 140 | € 0,522 | € 5,22 |
| 150 - 740 | € 0,42 | € 4,20 |
| 750 - 1490 | € 0,346 | € 3,46 |
| 1500+ | € 0,276 | € 2,76 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
PowerPAK ChipFET
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9.47 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Plotis
1.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Typical Gate Charge @ Vgs
26.2 nC @ 10 V
Aukštis
0.8mm
Serija
TrenchFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products